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AP300N15TLG1 - 150V N-Channel Enhancement Mode MOSFET

General Description

The AP300N15TLG1 uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 150V ID =300A RDS(ON) < 4.2mΩ @ VGS=10V (Type：3.3mΩ).

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Datasheet Details

Part number AP300N15TLG1
Manufacturer APM
File Size 1.32 MB
Description 150V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP300N15TLG1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP300N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP300N15TLG1 uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 150V ID =300A RDS(ON) < 4.2mΩ @ VGS=10V (Type：3.