Datasheet Details
| Part number | AP30G10GD |
|---|---|
| Manufacturer | APM |
| File Size | 0.97 MB |
| Description | 100V N+P-Channel Enhancement Mode MOSFET |
| Datasheet | AP30G10GD-APM.pdf |
|
|
Overview: Description AP30G10GD 100V N+P-Channel Enhancement Mode MOSFET The AP30G10GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
| Part number | AP30G10GD |
|---|---|
| Manufacturer | APM |
| File Size | 0.97 MB |
| Description | 100V N+P-Channel Enhancement Mode MOSFET |
| Datasheet | AP30G10GD-APM.pdf |
|
|
|
AP30G10GD 100V N+P-Channel Enhancement Mode MOSFET The AP30G10GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
General
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics |
| Part Number | Description |
|---|---|
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| AP30N15P | 150V N-Channel Enhancement Mode MOSFET |