AP30G100W Datasheet N-channel Insulated Gate Bipolar Transistor

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP30G100W RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR.

Datasheet Details

Part number	AP30G100W
Manufacturer	Advanced Power Electronics Corp
File Size	210.59 KB
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AP30G100W-AdvancedPowerElectronics.pdf

▼ High speed switching ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A ▼ Industry Standard TO-3P Package ▼ RoHS Compliant G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes.

Part Number	Description
AP30G120ASW	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120ASW-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30G120BSW-HF	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120CSW-HF	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120SW	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120W	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G40AEO	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30G40GEO-HF	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30N30W	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP30N30WI	N-CHANNEL ENHANCEMENT MODE POWER MOSFET