AP30G120ASW-HF Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Advanced Power Electronics Corp

Overview: Advanced Power Electronics Corp. AP30G120ASW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.

Datasheet Details

Part number	AP30G120ASW-HF
Manufacturer	Advanced Power Electronics Corp
File Size	97.58 KB
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	AP30G120ASW-HF-AdvancedPowerElectronics.pdf

▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IC@TC=25℃ Continuous Collector Current IC@TC=100℃ ICM Continuous Collector Current Pulsed Collector Current1 IF@TC=100℃ Diode Continunous Forward Current IFM Diode Pulse Forward Current PD@TC=25℃ Maximum Power Dissipation TSTG Storage Temperature.

Part Number	Description
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