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AP30G120ASW-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Key Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IC@TC=25℃ Continuous Collector Current IC@TC=100℃ ICM Continuous Collector Current Pulsed Collector Current1 IF@TC=100℃ Diode Continunous Forward Current IFM Diode Pulse Forward Current PD@TC=25℃ Maximum Power Dissipation TSTG Storage Temperature.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP30G120ASW N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120BSW-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120CSW-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120SW N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
AP30G120W N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Power Electronics Corp. AP30G120ASW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IC@TC=25℃ Continuous Collector Current IC@TC=100℃ ICM Continuous Collector Current Pulsed Collector Current1 IF@TC=100℃ Diode Continunous Forward Current IFM Diode Pulse Forward Current PD@TC=25℃ Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range TL Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds .