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AP30G120CSW-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free N-.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP30G120ASW N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP30G120CSW-HF Halogen-Free Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. VCES IC C G C E TO-3P G E Parameter Rating 1200 +30 60 30 120 8 40 208 -55 to 150 -55 to 150 300 1200V 30A Absolute Maximum Ratings Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds .