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AP3134AI - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP3134AL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS =20V ID =0.9A AP3134AI 20V N-Channel Enhancement Mode MOSFET RDS(ON) < 250mΩ @ VGS=4.5V （Type：135mΩ） ESD=2KV HBM.

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Datasheet preview – AP3134AI

Datasheet Details

Part number AP3134AI
Manufacturer APM
File Size 562.54 KB
Description 20V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP3134AI Datasheet
Additional preview pages of the AP3134AI datasheet.

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Full PDF Text Transcription

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Description The AP3134AL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS =20V ID =0.9A AP3134AI 20V N-Channel Enhancement Mode MOSFET RDS(ON) < 250mΩ @ VGS=4.5V （Type：135mΩ） ESD=2KV HBM Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP3134AI SOT23-3L 3134AI Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Max. VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 0.
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