AP3134AI Datasheet PDF

APM AP3134AI

The AP3134AL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

Part No.	AP3134AI
Datasheet	AP3134AI Download
Manufacturer	APM
Description	20V N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

GENERAL FEATURES

VDS =20V ID =0.9A AP3134AI 20V N-Channel Enhancement Mode MOSFET RDS(ON) < 250mΩ @ VGS=4.5V （Type：135mΩ） ESD=2KV HBM Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP3134AI SOT23-3L 3134AI

ABSOLUTE MAXIMUM RATINGS

@Tj=25oC(unless otherwise specified) Symbol Parameter Max. VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 0.9 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 0.6 IDM Pulsed Drain Current 3.6 PD@TC=25℃ TJ, TSTG Power Dissipation Operating and Storage Temperature Range 0.23 -55 to +150 RθJA Thermal Resistance Junction-Ambient 1 543 Qty(PCS) 3000 Units V V A A A W ℃ ℃/W AP3134AI REV1.0 永源微電子科技有限公司 1 AP3134AI 20V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID...