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AP3139AK - -20V P-Channel Enhancement Mode MOSFET

General Description

The AP3139AK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -20V ID =-0.8A RDS(ON) < 350mΩ @ VGS=-4.5V (Type：290mΩ) ESD=1.6KV HBM.

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Datasheet Details

Part number AP3139AK
Manufacturer APM
File Size 454.69 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP3139AK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP3139AK -20V P-Channel Enhancement Mode MOSFET Description The AP3139AK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-0.8A RDS(ON) < 350mΩ @ VGS=-4.5V (Type：290mΩ) ESD=1.6KV HBM Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP3139AK SOT523-3L 3139 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 ID@TA=70℃ Continuous Drain Current, VGS @ -4.