AP3139AK Datasheet PDF

APM AP3139AK

The AP3139AK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

Part No.	AP3139AK
Datasheet	AP3139AK Download
Manufacturer	APM
Description	-20V P-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

GENERAL FEATURES

VDS = -20V ID =-0.8A RDS(ON) < 350mΩ @ VGS=-4.5V (Type：290mΩ) ESD=1.6KV HBM Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP3139AK SOT523-3L 3139

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V1 IDM Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 Rating -20 ±12 -0.8 -0.3 -4.0 150 TSTG Storage Temperature Range -55 to 150 TJ RθJA Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 -55 to 150 833 Qty(PCS) 3000 Units V V A A A mW ℃ ℃ ℃/W AP3139AK REV1.0 永源微電子科技有限公司 1 AP3139AK -20V P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Cr...