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AP320N10BTLG2 Datasheet PDF

APM AP320N10BTLG2

The AP320N10BTLG2 uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP320N10BTLG2
Datasheet AP320N10BTLG2 Download
Manufacturer
APM
Description 100V N-Channel Enhancement Mode MOSFET
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AP320N10BTLG2 datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 100V ID =320A RDS(ON) < 1.6mΩ @ VGS=10V (Type:1.25mΩ) Application Isolated DC Motor control Synchronous-rectification Package Marking and Ordering Information Product ID Pack AP320N10BTLG2 TOLLA-8L Marking AP320N10BTLG2 XXXYYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V ID@TC=100℃ IDM EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case Rating 100 ±20 320 210 1248 2340 53.4 390.6 -55 to 175 -55 to 175 40 0.32 Qty(PCS) 2000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP320N10TLG2 REV1.0 永源微電子科技有限公司 1 AP320N10BTLG2 100V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TC=25℃unless other...
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