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AP320N10BTLG2 - 100V N-Channel Enhancement Mode MOSFET

General Description

The AP320N10BTLG2 uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID =320A RDS(ON) < 1.6mΩ @ VGS=10V (Type：1.25mΩ).

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Datasheet Details

Part number AP320N10BTLG2
Manufacturer APM
File Size 838.55 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP320N10BTLG2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP320N10BTLG2 100V N-Channel Enhancement Mode MOSFET Description The AP320N10BTLG2 uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =320A RDS(ON) < 1.6mΩ @ VGS=10V (Type：1.