DESCRIPTION
AP3411MI -30V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -30V ID =15A RDS(ON) < 23mΩ @ VGS=10V （Type：18mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP3411MI SOT23-3L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 IDM Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Marking 3411M-AP Rating -30 ±20 -15 -7.8 -30 125 29 -55 to 150 -55 to 150 125 3.6 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W AP3411MI RVE1.0 永源微電子科技有限公司 1 AP3411MI -30V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min.
APM
