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AP3411MI - -30V P-Channel Enhancement Mode MOSFET

General Description

The AP3411MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -30V ID =15A RDS(ON) < 23mΩ @ VGS=10V （Type：18mΩ）.

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Datasheet Details

Part number AP3411MI
Manufacturer APM
File Size 1.12 MB
Description -30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP3411MI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP3411MI -30V P-Channel Enhancement Mode MOSFET The AP3411MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.