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AP3411MI Datasheet -30v P-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: Description AP3411MI -30V P-Channel Enhancement Mode MOSFET The AP3411MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Datasheet Details

Part number AP3411MI
Manufacturer APM
File Size 1.12 MB
Description -30V P-Channel Enhancement Mode MOSFET
Datasheet AP3411MI-APM.pdf

General Description

AP3411MI -30V P-Channel Enhancement Mode MOSFET The AP3411MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = -30V ID =15A RDS(ON) < 23mΩ @ VGS=10V (Type:18mΩ).

AP3411MI Distributor