AP3411MI
Description
-30V P-Channel Enhancement Mode MOSFET
The AP3411MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = -30V ID =15A
RDS(ON) < 23mΩ @ VGS=10V （Type：18mΩ）
Application
Lithium battery protection Wireless impact Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
SOT23-3L
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current, VGS @ -10V1
ID@TC=100℃
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
PD@TC=25℃
Total Power Dissipation4
TSTG
Storage Temperature Range
Operating Junction Temperature Range
RθJA
Thermal Resistance Junction-Ambient 1
RθJC
Thermal...
