DESCRIPTION
GENERAL FEATURES
VDS = 30V ID =18A RDS(ON) < 12mΩ @ VGS=10V （Type：9.0mΩ） RDS(ON) < 13mΩ @ VGS=10V （Type：11mΩ） Application VBUS Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack AP3414MI SOT23-3L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 ID@TC=100℃ IDM PD@TC=25℃ Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 Marking 3414M AP Rating 30 ±20 18 9 54 29 -55 to 150 -55 to 150 125 4.32 Qty(PCS) 5000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP3414MI REV1.0 永源微電子科技有限公司 1 AP3414MI 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. BVDSS Drain-Source Bre...
APM
