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AP3414MI - 30V N-Channel Enhancement Mode MOSFET

General Description

The AP3414MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 30V ID =18A RDS(ON) < 12mΩ @ VGS=10V （Type：9.0mΩ） RDS(ON) < 13mΩ @ VGS=10V （Type：11mΩ）.

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Datasheet Details

Part number AP3414MI
Manufacturer APM
File Size 604.55 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP3414MI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP3414MI 30V N-Channel Enhancement Mode MOSFET Description The AP3414MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =18A RDS(ON) < 12mΩ @ VGS=10V （Type：9.