AP3414MI
Description
The AP3414MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features
VDS = 30V ID =18A
RDS(ON) < 12mΩ @ VGS=10V （Type：9.0mΩ）
RDS(ON) < 13mΩ @ VGS=10V （Type：11mΩ）
Application
VBUS Wireless impact Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
SOT23-3L
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol VDS VGS
Parameter Drain-Source Voltage Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
ID@TC=100℃ IDM
PD@TC=25℃
Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2
Total Power Dissipation4
TSTG
Storage Temperature Range
Operating Junction Temperature Range
RθJA
Thermal Resistance Junction-ambient 1
RθJC
Thermal Resistance Junction-Case1
Marking 3414M AP
Rating 30 ±20 18 9 54 29
-55 to 150 -55 to...
