DESCRIPTION
AP40P10PIT -100V P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = -100V ID =-40A RDS(ON) <55mΩ @ VGS=10V (Type：48mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP40P10P TO-220-3L AP40P10P XXX YYYY AP40P10T TO-263-3L AP40P10T XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage -100 VGS ID@TC=25℃ ID@TC=100℃ IDM EAS Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 ±20 -40 -29 -120 560 IAS PD@TC=25℃ TSTG Avalanche Current Total Power Dissipation4 Storage Temperature Range -29 104 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 62.5 RθJC Thermal Resistance Junction-Case1 1.22 Qty(PCS) 1000 800 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP40P10P/T REV1.0 永源微電子科技有限公司 1 AP40P10PIT -100V P-Channel Enhancement Mode MOSFET P-Channel ELECTRICAL CHARACTERISTICS
(TJ =25 ℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
