AP40P10T Datasheet | APM

Description AP40P10PIT -100V P-Channel Enhancement Mode MOSFET The AP40P10P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-40A RDS(ON) <55mΩ @ VGS=10V (Type：48mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP40P10P TO-220-3L AP40P10P XXX YYYY TO-263-3L AP40P10T XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Drain-Source Voltage -100 VGS ID@TC=25℃ ID@TC=100℃ IDM EAS Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 ±20 -40 -29 -120 560 IAS PD@TC=25℃ TSTG Avalanche Current Total Power Dissipation4 Storage Temperature Range -29 104 -55 to 150 Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient...