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AP4N90D - 900V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • VDS = 900V ID =4.0A RDS(ON) < 3500mΩ @ VGS=10V （Type：3000mΩ）.

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Datasheet Details

Part number AP4N90D
Manufacturer APM
File Size 1.53 MB
Description 900V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4N90D Datasheet
Additional preview pages of the AP4N90D datasheet.

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Full PDF Text Transcription

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AP4N90DIY 900V N-Channel Enhancement Mode MOSFET Description The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 900V ID =4.
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