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AP4N90D Datasheet 900V N-Channel Enhancement Mode MOSFET

Manufacturer: APM

Datasheet Details

Part number AP4N90D
Manufacturer APM
File Size 1.53 MB
Description 900V N-Channel Enhancement Mode MOSFET
Download AP4N90D Download (PDF)

General Description

The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

General

Overview

AP4N90DIY 900V N-Channel Enhancement Mode MOSFET.

Key Features

  • VDS = 900V ID =4.0A RDS(ON) < 3500mΩ @ VGS=10V (Type:3000mΩ).