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AP4N90Y Datasheet PDF

APM AP4N90Y

The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Part No. AP4N90Y
Datasheet AP4N90Y Download
Manufacturer
APM
Description 900V N-Channel Enhancement Mode MOSFET
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AP4N90Y datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 900V ID =4.0A RDS(ON) < 3500mΩ @ VGS=10V (Type:3000mΩ) Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP4N90D TO-252-3L AP4N90D XXX YYYY AP4N90Y TO-251S-3L AP4N90Y XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter Value VDSS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS EAR PD Tj ,Tstg Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Drain Current - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Power Dissipation Operating and Storage Temperature Range 900 ± 30 4.0 2.1 16 125 6 0.72 25 -55 to +150 RθJC Thermal Resistance, Junction-to-Case 5.0 RθJA Thermal Resistance, Junction-to-Ambient 62.5 Qty(PCS) 2500 4000 Units V V A A A mJ A mJ W oC °C/W °C/W AP4N90D/Y REV1.0 永源微電子科技有限公司 1 AP4N90DIY 900V N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=2...
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