• Part: AP4N90Y
  • Manufacturer: APM
  • Size: 1.53 MB
Download AP4N90Y Datasheet PDF
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AP4N90Y Description

The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.