AP4N90Y Datasheet PDF - APM 900V N-Channel Enhancement Mode MOSFET Specs

AP4N90Y - 900V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AP4N90Y, a member of the AP4N90D 900V N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

VDS = 900V ID =4.0A RDS(ON) < 3500mΩ @ VGS=10V （Type：3000mΩ）.

Datasheet Details

Part number	AP4N90Y
Manufacturer	APM
File Size	1.53 MB
Description	900V N-Channel Enhancement Mode MOSFET
Datasheet	AP4N90Y Datasheet
Additional preview pages of the AP4N90Y datasheet.

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Full PDF Text Transcription

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AP4N90DIY 900V N-Channel Enhancement Mode MOSFET Description The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 900V ID =4.

Published: Mar 25, 2025 |