Datasheet4U Logo Datasheet4U.com

AP4N90Y Datasheet 900V N-Channel Enhancement Mode MOSFET

Manufacturer: APM

Download the AP4N90Y datasheet PDF. This datasheet also includes the AP4N90D variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP4N90D-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AP4N90Y
Manufacturer APM
File Size 1.53 MB
Description 900V N-Channel Enhancement Mode MOSFET
Download AP4N90Y Download (PDF)

General Description

The AP4N90D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

General

Overview

AP4N90DIY 900V N-Channel Enhancement Mode MOSFET.

Key Features

  • VDS = 900V ID =4.0A RDS(ON) < 3500mΩ @ VGS=10V (Type:3000mΩ).