AP7N65F - 650V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

performance and enhance the avalanche energy.

Features

VDS = 650V ID =7A RDS(ON) < 1.2Ω @ VGS=10V （Type：1.0Ω）.

APM

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AP7N65F 650V N-Channel Enhancement Mode MOSFET by APM - Datasheet Preview — Datasheet preview – AP7N65F

Datasheet Details

Part number	AP7N65F
Manufacturer	APM
File Size	1.73 MB
Description	650V N-Channel Enhancement Mode MOSFET
Datasheet	AP7N65F Datasheet
Additional preview pages of the AP7N65F datasheet.

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Full PDF Text Transcription

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Description AP7N65FIP 650V N-Channel Enhancement Mode MOSFET The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 650V ID =7A RDS(ON) < 1.2Ω @ VGS=10V （Type：1.

Published: Mar 4, 2025 |