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AP7N65P - 650V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AP7N65P, a member of the AP7N65F 650V N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

performance and enhance the avalanche energy.

Features

  • VDS = 650V ID =7A RDS(ON) < 1.2Ω @ VGS=10V （Type：1.0Ω）.

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Datasheet preview – AP7N65P

Datasheet Details

Part number AP7N65P
Manufacturer APM
File Size 1.73 MB
Description 650V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP7N65P Datasheet
Additional preview pages of the AP7N65P datasheet.

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Full PDF Text Transcription

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Description AP7N65FIP 650V N-Channel Enhancement Mode MOSFET The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 650V ID =7A RDS(ON) < 1.2Ω @ VGS=10V （Type：1.
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