DESCRIPTION
AP7N65FIP 650V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 650V ID =7A RDS(ON) < 1.2Ω @ VGS=10V （Type：1.0Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP7N65F TO-220F-3L AP7N65F XXX YYYY AP7N65P TO-220-3L AP7N65P XXX YYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Value TO-220F TO-220 VDSS Drain-Source Voltage (VGS = 0V) 650 ID Continuous Drain Current 7 IDM Pulsed Drain Current (note1) 28 VGS Gate-Source Voltage ±30 EAS Single Pulse Avalanche Energy (note2) 247 IAR Avalanche Current (note1) 7 EAR Repetitive Avalanche Energy note1) 18 PD TJ, Tstg Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range 32.9 -55~+150 RthJC Thermal Resistance, Junction-to-Case 3.8 RthJA Thermal Resistance, Junction-to-Ambient 13.3 Qty(PCS) 1000 1000 Unit V A A V mJ A mJ W ºC ºC/W ºC/W AP7N65F/P RVE1.1 永源微電子科技有限公司 1 AP7N65FIP 650V N-C...
APM
