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AP80P04T - -40V P-Channel Enhancement Mode MOSFET

Download the AP80P04T datasheet PDF. This datasheet also covers the AP80P04P variant, as both devices belong to the same -40v p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The AP80P04P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -40V ID =-80 A RDS(ON) < 8.5mΩ @ VGS=-10V (Type：6.5mΩ).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP80P04P-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AP80P04T
Manufacturer APM
File Size 790.82 KB
Description -40V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP80P04T Datasheet

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Other Datasheets by APM

Part Number Description
AP80P04P -40V P-Channel Enhancement Mode MOSFET
AP80N03BDF 30V N-Channel Enhancement Mode MOSFET
AP80N03D 30V N-Channel Enhancement Mode MOSFET
AP80N06HP 60V N-Channel Enhancement Mode MOSFET
AP80N06HT 60V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AP80P04PIT -40V P-Channel Enhancement Mode MOSFET Description The AP80P04P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -40V ID =-80 A RDS(ON) < 8.5mΩ @ VGS=-10V (Type：6.