Datasheet4U.com

AP80P04P Datasheet PDF

APM AP80P04P

The AP80P04P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP80P04P
Datasheet AP80P04P Download
Manufacturer
APM
Description -40V P-Channel Enhancement Mode MOSFET
Buy Stock & Price
AP80P04P datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = -40V ID =-80 A RDS(ON) < 8.5mΩ @ VGS=-10V (Type:6.5mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP80P04P TO-220-3L AP80P04P XXX YYYY AP80P04T TO-263-3L AP80P04T XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 IDM Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating -40 ±20 -80 -50.6 -320 101.2 -45 102 -55 to 150 -55 to 150 62 1.35 Qty(PCS) 1000 800 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP80P04P/T REV1.0 永源微電子科技有限公司 1 AP80P04PIT -40V P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min.
AP80P04P page 2 preview AP80P04P page 3 preview