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AP80P04P - -40V P-Channel Enhancement Mode MOSFET

General Description

The AP80P04P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = -40V ID =-80 A RDS(ON) < 8.5mΩ @ VGS=-10V (Type：6.5mΩ).

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Datasheet Details

Part number AP80P04P
Manufacturer APM
File Size 790.82 KB
Description -40V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP80P04P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP80P04PIT -40V P-Channel Enhancement Mode MOSFET Description The AP80P04P/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -40V ID =-80 A RDS(ON) < 8.5mΩ @ VGS=-10V (Type：6.