AP9N50D Overview
Description
The AP9N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- VDS = 500V ID =9A RDS(ON) < 720mΩ @ VGS=10V （Type：630mΩ）
