DESCRIPTION
GENERAL FEATURES
VDS = 500V ID =9A RDS(ON) < 720mΩ @ VGS=10V （Type：630mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP9N50D TO-252-3L AP9N50D XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Value VDSS Drain-Source Voltage (VGS = 0V) 500 ID Continuous Drain Current 9 IDM Pulsed Drain Current (note1) 36 VGS Gate-Source Voltage ±30 EAS Single Pulse Avalanche Energy (note2) 347 IAR Avalanche Current (note1) 9 EAR Repetitive Avalanche Energy note1) 22 PD Power Dissipation (TC = 25ºC) 178 TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 RthJC Thermal Resistance, Junction-to-Case 0.7 RthJA Thermal Resistance, Junction-to-Ambient 62.5 Qty(PCS) 2500 Unit V A A V mJ A mJ W ºC ºC/W ºC/W AP9N50D RVE1.0 永源微電子科技有限公司 1 AP9N50D 500V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter...
APM
