The AP9N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
| Part number | AP9N50D |
|---|---|
| Manufacturer | APM |
| File Size | 1.41 MB |
| Description | 500V N-Channel Enhancement Mode MOSFET |
| Datasheet |
 AP9N50D Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| AP9050 | PROTECTION INTERFACE | Diodes Incorporated |
| AP9060 | OVERVOLTAGE CLAMP | Diodes Incorporated |
| AP90T03GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP90T03GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP90T03GI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| Part Number | Description |
|---|---|
| AP9N90F | 900V N-Channel Enhancement Mode MOSFET |
| AP9N90P | 900V N-Channel Enhancement Mode MOSFET |
| AP9N90T | 900V N-Channel Enhancement Mode MOSFET |
| AP90N03D | 30V N-Channel Enhancement Mode MOSFET |
| AP90N03NF | 30V N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
