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MRA1417-2
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz.
FEATURES INCLUDE:
• Gold Metallization • Emitter Ballasting • Input Matching
MAXIMUM RATINGS
IC 0.5 A
VCBO
50 V
PDISS
12 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 15 °C/W
PACKAGE STYLE 250 2L FLG (C)
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCES
IC = 20 mA
BVEBO
IE = 0.25 mA
ICBO
VCB = 28 V
hFE VCE = 5.0 V IC = 100 mA
MINIMUM TYPICAL MAXIMUM
50 3.5
0.5 10 100
Cob VCB = 28 V
f = 1.0 MHz
4.5
PG ηC
VCE = 28 V POUT = 2.0 W
f = 1700 MHz
8.0 45
UNITS
V V mA ---
pF
dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
MRA1417-2 Datasheet
