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MRA1417-2 Datasheet PDF

ASI MRA1417-2

MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz.
Part No. MRA1417-2
Datasheet MRA1417-2 Download
Manufacturer
ASI
Description NPN SILICON RF POWER TRANSISTOR
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MRA1417-2 datasheet page 1 preview

DESCRIPTION

: The ASI

FEATURES

INCLUDE:
● Gold Metallization
● Emitter Ballasting
● Input Matching

MAXIMUM RATINGS

IC 0.5 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 15 °C/W PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCES IC = 20 mA BVEBO IE = 0.25 mA ICBO VCB = 28 V hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 50 3.5 0.5 10 100 Cob VCB = 28 V f = 1.0 MHz 4.5 PG ηC VCE = 28 V POUT = 2.0 W f = 1700 MHz 8.0 45 UNITS V V mA --- pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE
● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1