Datasheet Details
| Part number | MRF136 |
|---|---|
| Manufacturer | ASI |
| File Size | 15.82 KB |
| Description | RF POWER FIELD-EFFECT TRANSISTOR |
| Datasheet | MRF136-ASI.pdf |
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Overview: MRF136 RF POWER FIELD-EFFECT TRANSISTOR.
| Part number | MRF136 |
|---|---|
| Manufacturer | ASI |
| File Size | 15.82 KB |
| Description | RF POWER FIELD-EFFECT TRANSISTOR |
| Datasheet | MRF136-ASI.pdf |
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: The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.
MAXIMUM RATINGS ID 2.5 A VDSS 65 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 3.6 °C/W PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3 & 4 = SOURCE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS V(BR)DSS ID = 5.0 mA VGS = 0 V IDSS VDS = 28 V VGS = 0 V IGSS VDS = 0 V VGS = 40 V VGS(th) ID = 25 mA VDS = 10 V gfs ID = 250 mA VDS = 10 V Ciss Coss Crss VDS = 28 V VGS = 0 V f = 1.0 MHz NF VDS = 28 V ID = 0.5 A f = 150 MHz Gps VDD = 28 V Pout = 15 W η IDQ = 25 mA f = 150 MHz ψ VDD = 28 V Pout = 15 W f = 150 MHz IDQ = 25 mA VSWR 30:1 @ ALL PHASE ANGLES MINIMUM TYPICAL MAXIMUM 65 2.0 1.0 1.0 3.0 6.0 250 400 UNITS V mA µA V mmhos 24 25 pF 5.5 1.0 dB 12 16 dB 50 60 % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
Compare MRF136 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MRF136 | The RF MOSFET | MA-COM |
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