Datasheet4U Logo Datasheet4U.com

MRF136 - N-CHANNEL MOS BROADBAND RF POWER FETs

Features

  • 5 1 1.5 2 2.5 Pin, INPUT POWER (WATTS) 3 3.5 VDD = 28 V IDQ = 100 mA f = 400 MHz 40 35 30 25 20 15 10 5 0.
  • 4.
  • 3.
  • 1 1.
  • 2 0 2 VGS, GATE.
  • SOURCE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF136 The RF MOSFET MA-COM
MRF136 N-CHANNEL MOS BROADBAND RF POWER FET Tyco Electronics
MRF136 RF POWER FIELD-EFFECT TRANSISTOR ASI
MRF134 N-CHANNEL MOS BROADBAND RF POWER FET Tyco Electronics
MRF134 RF MOSFET MACOM

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF136Y N-CHANNEL MOS BROADBAND RF POWER FETs
MRF134 N-CHANNEL MOS BROADBAND RF POWER FET
MRF137 N-CHANNEL MOS BROADBAND RF POWER FET
MRF10005 MICROWAVE POWER TRANSISTOR
MRF1002 MICROWAVE POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF136/D The RF MOSFET Line RF Power Field-Effect Transistors N-Channel Enhancement-Mode MOSFETs . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.
Published: |