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MT5C1001 - SRAM

General Description

The MT5C1001 employs low power, high-performance silicon-gate CMOS technology.

Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for greater reliability.

Key Features

  • High Speed: 20, 25, 35, and 45 Battery Backup: 2V data retention Low power standby Single +5V (+10%) Power Supply Easy memory expansion with CE and OE options. All inputs and outputs are TTL compatible Three-state output 32-Pin Flat Pack (F).

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Datasheet Details

Part number MT5C1001
Manufacturer ASI
File Size 166.87 KB
Description SRAM
Datasheet download datasheet MT5C1001 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Austin Semiconductor, Inc. 1M x 1 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 MT5C1001 Limited Availability PIN ASSIGNMENT (Top View) SRAM 28-Pin DIP (C) (400 MIL) A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc A9 A8 A7 A6 A5 A4 NC A3 A2 A1 A0 D CE 32-Pin LCC (EC) 32-Pin SOJ (DCJ) A10 A11 A12 NC A13 A14 A15 NC A16 A17 A18 A19 NC Q WE Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc NC A9 A8 A7 A6 A5 A4 A3 NC A2 NC A1 A0 D CE FEATURES • • • • • • • High Speed: 20, 25, 35, and 45 Battery Backup: 2V data retention Low power standby Single +5V (+10%) Power Supply Easy memory expansion with CE and OE options.