MT5C1001 Description
The MT5C1001 employs low power, high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes while CMOS circuitry reduces power consumption and provides for greater reliability. For flexibility in high-speed memory applications, ASI offers chip enable (CE) and output enable (OE) capability.
MT5C1001 Key Features
- High Speed: 20, 25, 35, and 45 Battery Backup: 2V data retention Low power standby Single +5V (+10%) Power Supply Easy m
- Package(s) Ceramic DIP (400 mil) Ceramic LCC Ceramic Flatpack Ceramic SOJ
- 20 -25 -35 -45 -55- -70
MT5C1001 Applications
- Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT