Description
The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology.
Features
- High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE1, CE2, and OE options.
- All inputs and outputs are TTL compatible
32-Pin LCC (ECA)
4 3 2 1 32 31 30
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22.
MT5C1008 Datasheet
