MT5C1008LL - 128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER

Austin Semiconductor

General Description

C No.

111 The MT5C1008 SRAM is a high-performance CMOS static RAM organized as 131, 072 words by 8 bits, offering low active power and ultra low standby and data retention current levels.

Key Features

www. DataSheet4U. com A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND High Speed: 30 ns Low active power: 715 mW worst case Low CMOS standby power: 3.3 mW worst case 2.0V data retention, Ultra Low 0.3mW worst case power dissipation Battery backup.

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MT5C1008LL 128k x 8 sram with dual chip enable ultra low power by Austin Semiconductor - Datasheet Preview

Datasheet Details

Part number	MT5C1008LL
Manufacturer	Austin Semiconductor
File Size	149.58 KB
Description	128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
Datasheet	MT5C1008LL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM Austin Semiconductor, Inc. 128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER AVAILABLE AS MILITARY SPECIFICATIONS •MIL-STD-883, para. 1.2.2 compliant MT5C1008(LL) Ultra Low Power PIN ASSIGNMENT (Top View) 32-Pin DIP (C) NC A16 A14 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 26 27 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 FEATURES • • • • • • • • www.DataSheet4U.com A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND High Speed: 30 ns Low active power: 715 mW worst case Low CMOS standby power: 3.3 mW worst case 2.0V data retention, Ultra Low 0.