Austin Semiconductor MT5C1008LL
The MT5C1008 SRAM is a high-performance CMOS static RAM organized as 131, 072 words by 8 bits, offering low active power and ultra low standby and data retention current levels.| Part No. | MT5C1008LL |
|---|---|
| Datasheet | MT5C1008LL Download |
| Manufacturer |  Austin Semiconductor |
| Description | 128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER |
| Buy | Stock & Price |
FEATURES
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● A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND High Speed: 30 ns Low active power: 715 mW worst case Low CMOS standby power: 3.3 mW worst case 2.0V data retention, Ultra Low 0.3mW worst case power dissipation Battery backup applications Automatic power-down when deselected TTL-compatible inputs and outputs Easy memory expansion with CE1\, CE2, and OE\ options OPTIONS
● Timing 30ns access
● Package(s) Ceramic DIP (400 mil)
● Temperature Military (-55°C to +125°C) MARKING -30
GENERAL DESCRIPTION
C No. 111 Easy memory expansion is provided by an active LOW Chip Enable (CE1\), an active HIGH Chip Enable (CE2), and active Low Output Enable (OE\), and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1\) and Write Enable (WE\) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Reading from the device is accomplished by taking Chip Enable One (CE1\) and Output Enable (OE\) LOW while forcing Write Enable (WE\) and Chip Enable Two (CE2) HIGH.
