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TAN250A
RF POWER TRANSISTOR
DESCRIPTION:
The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications.
PACKAGE STYLE FEATURES INCLUDE:
• Gold Metallization • Hermetic Package • Input/Output Matching
MAXIMUM RATINGS
IC VCB PDISS TJ T STG θ JC 30 A 60 V 575 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 0.30 OC/W
TC = 25 OC
CHARACTERISTICS
SYMBOL
BV CBO BV CES BV EBO ICBO hFE POUT PG ηC IC = 20 mA IC = 25 mA IE = 20 mA VCB = 50 V VCE = 5 V
TEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
60 60 4.0 12
UNITS
V V V mA --W dB %
IC = 1.0 A f = 960 to 1215 MHz Duty Cycle = 5 %
20 250 6.0
120
VCC = 50 V PIN = 13 W Pulse Width = 20 µS
7.0 40
A D V A N C E D S E M I C O N D U C T O R, I N C.
TAN250A Datasheet
