GENERAL DESCRIPTION
The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 575 Watts 60 Volts 4.0 Volts 30 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS
@ 25 OC SYMBOL Pout Pin Pg ηc VSWR BVebo BVces hFE CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 960-1215 MHz Vcc = 50 Volts PW = 20 µsec DF = 5% F = 1090 MHz Ie = 20 mA Ic = 25 mA Ic = 1A, Vce = 5V See Chart MIN 250 60 6.0 7.0 40 5:1 TYP MAX UNITS Watts Watts dB % θjc2 Emitter to Base Breakdown Collector to Emitt...
