Datasheet Summary
Features
- Fast Read Access Time
- 150 ns
- Fast Byte Write
- 200 µs or 1 ms
- Self-Timed Byte Write Cycle
- Internal Address and Data Latches
- Internal Control Timer
- Automatic Clear Before Write Direct Microprocessor Control
- DATA POLLING Low Power
- 30 mA Active Current
- 100 µA CMOS Standby Current High Reliability
- Endurance: 104 or 105 Cycles
- Data Retention: 10 Years 5V ± 10% Supply CMOS & TTL patible Inputs and Outputs JEDEC Approved Byte Wide Pinout mercial and Industrial Temperature Ranges
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- 16K (2K x 8) Parallel EEPROMs AT28C16
Description
The AT28C16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to...
