Datasheet Summary
Features
- Ideal Rewritable Attribute Memory
- Simple Write Operation
- Self-Timed Byte Writes
- On-chip Address and Data Latch for SRAM-like Write Operation
- Fast Write Cycle Time
- 1 ms
- 5-Volt-Only Nonvolatile Writes
- End of Write Detection
- RDY/BUSY Output
- DATA Polling
- High Reliability
- Endurance: 100,000 Write Cycles
- Data Retention: 10 Years Minimum
- Single 5-Volt Supply for Read and Write
- Very Low Power
- 30 mA Active Current
- 100 µA Standby Current
Description
The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a...
