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AT28C16-T - 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory

General Description

The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM).

Standby current is typically less than 100 µA.

The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms.

Key Features

  • Ideal Rewritable Attribute Memory.
  • Simple Write Operation.
  • Self-Timed Byte Writes.
  • On-chip Address and Data Latch for SRAM-like Write Operation.
  • Fast Write Cycle Time - 1 ms.
  • 5-Volt-Only Nonvolatile Writes.
  • End of Write Detection.
  • RDY/BUSY Output.
  • DATA Polling.
  • High Reliability.
  • Endurance: 100,000 Write Cycles.
  • Data Retention: 10 Years Minimum.
  • Single 5-Volt Supply for Read and W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Ideal Rewritable Attribute Memory • Simple Write Operation – Self-Timed Byte Writes – On-chip Address and Data Latch for SRAM-like Write Operation – Fast Write Cycle Time - 1 ms – 5-Volt-Only Nonvolatile Writes • End of Write Detection – RDY/BUSY Output – DATA Polling • High Reliability – Endurance: 100,000 Write Cycles – Data Retention: 10 Years Minimum • Single 5-Volt Supply for Read and Write • Very Low Power – 30 mA Active Current – 100 µA Standby Current Description The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms.