AT49BV640DT Datasheet | Atmel

Features .. - Single Voltage Operation Read/Write: 2.65V - 3.6V - Access Time - 70 ns - Sector Erase Architecture - - - - - - - - - - - - - - One Hundred Twenty-seven 32K Word (64K Bytes) Main Sectors with Individual Write Lockout - Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time - 10 µs Typical Sector Erase Time: 32K Word Sectors - 700 ms; 4K Word Sectors - 100 ms Suspend/Resume Feature for Erase and Program - Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector - Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation - 10 m A Active - 15 µA Standby VPP Pin for Write Protection and Accelerated Program Operation WP Pin for Sector Protection RESET Input for Device Initialization Flexible Sector Protection Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles mon Flash Interface (CFI) Green (Pb/Halide-free/Ro HS pliant) Packaging 64-megabit (4M x 16) 3-volt Only Flash Memory AT49BV640D AT49BV640DT 1. Description The AT49BV640D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The device is offered in a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. mand sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see “Flexible Sector Protection” on page 6). To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature . This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors...