AT49BV640ST Datasheet | Atmel

Features .. - Single Voltage Operation Read/Write: 2.65V - 3.6V - Access Time - 70 ns - Sector Erase Architecture - - - - - - - - - - - - - - One Hundred Twenty-seven 32K Word (64K Bytes) Main Sectors with Individual Write Lockout - Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time - 10 µs Typical Sector Erase Time: 32K Word Sectors - 700 ms; 4K Word Sectors - 100 ms Suspend/Resume Feature for Erase and Program - Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector - Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation - 10 m A Active - 15 µA Standby VPP Pin for Write Protection and Accelerated Program Operation RESET Input for Device Initialization Softlock Sector Protection Secure Lock and Freeze Feature Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles mon Flash Interface (CFI) CBGA Green (Pb/Halide-free/Ro HS pliant) Packaging 64-megabit (4M x 16) Secure 3-volt Only Memory AT49BV640S AT49BV640ST Summary (plete Datasheet under NDA) 1. Description The AT49BV640S(T) is a 2.7-volt 32-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The device is offered in a 64-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. In some applications, in addition to the standard softlock sector protection mechanism, a requirement exists to allow for the permanent and irreversible locking of selected regions in the memory. The AT49BV640S(T) allows the user to permanently lock thirty-eight regions, and once activated these secure regions cannot be altered or erased through Software or Hardware at any time. Once activated, no facility exists to over-ride the secure lock mechanism....