AT49BV6416T Datasheet | Atmel

Features - 64-megabit (4M x 16) Flash Memory - 2.7V - 3.6V Read/Write - High Performance - Asynchronous Access Time - 70 ns - Page Mode Read Time - 20 ns Sector Erase Architecture - Eight 4K Word Sectors with Individual Write Lockout - One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sectors - 700 ms; 4K Word Sectors - 200 ms Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being Programmed/Erased - Memory Plane A: 16M of Memory Including Eight 4K Word Sectors - Memory Plane B: 16M of Memory Consisting of 32K Word Sectors - Memory Plane C: 16M of Memory Consisting of 32K Word Sectors - Memory Plane D: 16M of Memory Consisting of 32K Word Sectors Suspend/Resume Feature for Erase and Program - Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector - Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation - 30 m A Active - 35 µA Standby 2.2V I/O Option Reduces Overall System Power Data Polling and Toggle Bit for End of Program Detection VPP Pin for Write Protection and Accelerated Program Operations RESET Input for Device Initialization TSOP Package Top or Bottom Boot Block Configuration Available 128-bit Protection Register mon Flash Interface (CFI) Green (Pb/Halide-free) Packaging Option - - - - 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory AT49BV6416 AT49BV6416T - - - - - - - - - - 1. Description The AT49BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided into multiple sectors and planes for erase operations. The device can be read or reprogrammed off a single 2.7V power supply, making it ideally suited for in-system programming. The output voltage can be separately controlled down to 2.2V through the VCCQ supply pin. The device can operate in the asynchronous or page read mode. The AT49BV6416(T) is divided into four memory planes. A read operation can occur in any of...