AT49BV802AT Datasheet | Atmel

Features - Single Voltage Read/Write Operation: 2.65V to 3.6V - Access Time - 70 ns - Sector Erase Architecture - - - - Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout - Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Byte/Word Program Time - 12 µs Fast Sector Erase Time - 300 ms Suspend/Resume Feature for Erase and Program - Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector - Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word Low-power Operation - 12 m A Active - 13 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection RESET Input for Device Initialization Sector Lockdown Support TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles mon Flash Interface (CFI) - - - - - - - - - 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory AT49BV802A AT49BV802AT Description The AT49BV802A(T) is a 2.7-volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sectors for erase operations. The AT49BV802A(T) is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. Pin Configurations Pin Name A0 - A18 CE OE WE RESET RDY/BUSY I/O0 - I/O14 I/O15 (A-1) BYTE NC Function Addresses Chip Enable Output Enable Write Enable Reset READY/BUSY Output Data Inputs/Outputs I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) Selects Byte or Word Mode No Connect Rev. 3405C- FLASH- 9/04 .. TSOP Top View Type 1 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET NC NC RDY/BUSY A18 A17 A7 A6 A5 A4 A3 A2...