AT49BV160 Overview
The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations.
AT49BV160 Key Features
- Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
- Access Time
- Sector Erase Architecture
- Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
- Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time
- 20 µs Fast Sector Erase Time
- 300 ms Suspend/Resume Feature for Erase and Program
- Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
- Supports Reading Any Byte/Word by Suspending Programming of Any Other Byte/Word Low-power Operation
- 30 mA Active
