Datasheet Summary
Features
- 2.7V to 3.3V Read/Write
- Access Time
- 90 ns
- Sector Erase Architecture
- Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
- Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
- Two 16K Word (32K Byte) Sectors with Individual Write Lockout
- Fast Word Program Time
- 20 µs
- Fast Sector Erase Time
- 200 ms
- Dual Plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
- Erase Suspend Capability
- Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
- Low-power Operation
- 25 mA Active
-...
