AT49BV1614 Overview
Eight 4K Word, Two 16K Word and Six 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors Erase Suspend Capability Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation 25 mA Active 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection Optional VPP Pin for Fast Programming RESET Input for Device Initialization Sector...
AT49BV1614 Key Features
- 2.7V to 3.3V Read/Write
- Access Time
- Sector Erase Architecture
- Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
- Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
- Two 16K Word (32K Byte) Sectors with Individual Write Lockout
- Fast Word Program Time
- Fast Sector Erase Time
- 200 ms
- Dual Plane Organization, Permitting Concurrent Read while Program/Erase
