AT49BV1614T
Overview
- 2.7V to 3.3V Read/Write
- Access Time - 90 ns
- Sector Erase Architecture - Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout
- Fast Word Program Time - 20 µs
- Fast Sector Erase Time - 200 ms
- Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors
- Erase Suspend Capability - Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
- Low-power Operation - 25 mA Active - 10 µA Standby
- Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
- Optional VPP Pin for Fast Programming
