AT49BV1614A
Overview
- Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
- Access Time - 70 ns
- Sector Erase Architecture - Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout - Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
- Fast Word Program Time - 20 µs
- Fast Sector Erase Time - 300 ms
- Dual-plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word and Seven 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors
- Erase Suspend Capability - Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
- Low-power Operation - 30 mA Active - 10 µA Standby
- Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
- VPP Pin for Accelerated Program/Erase Operations
