AT49BV1614A Overview
Features Single Voltage Read/Write Operation: Eight 4K Word and Seven 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors Erase Suspend Capability Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation 30 mA Active 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Accelerated Program/Erase Operations RESET...
AT49BV1614A Key Features
- Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
- Access Time
- Sector Erase Architecture
- Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
- Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
- Fast Word Program Time
- Fast Sector Erase Time
- 300 ms
- Dual-plane Organization, Permitting Concurrent Read while Program/Erase
- Erase Suspend Capability
