Datasheet Summary
Features
- Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
- Access Time
- 70 ns
- Sector Erase Architecture
- Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
- Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
- Fast Word Program Time
- 20 µs
- Fast Sector Erase Time
- 300 ms
- Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
- Erase Suspend Capability
- Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
- Low-power Operation
- 30 mA Active
- 10 µA Standby
- Data...
