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AT49BV160C - 16-megabit (1M x 16) 3-volt Only Flash Memory

Key Features

  • Single Voltage Read/Write Operation: 2.65V to 3.6V.
  • Access Time.
  • 70 ns.
  • Sector Erase Architecture.
  • Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout.
  • Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout.
  • Fast Word Program Time.
  • 12 µs.
  • Fast Sector Erase Time.
  • 300 ms.
  • Suspend/Resume Feature for Erase and Program.
  • Supports Reading and Programming from Any Sector.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Single Voltage Read/Write Operation: 2.65V to 3.