AT49BV160CT
Overview
- Single Voltage Read/Write Operation: 2.65V to 3.6V
- Access Time - 70 ns
- Sector Erase Architecture - Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout - Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
- Fast Word Program Time - 12 µs
- Fast Sector Erase Time - 300 ms
- Suspend/Resume Feature for Erase and Program - Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector - Supports Reading Any Word by Suspending Programming of Any Other Word
- Low-power Operation - 12 mA Active - 13 µA Standby
- VPP Pin for Write Protection
- WP Pin for Sector Protection
- RESET Input for Device Initialization
