Datasheet Summary
Features
- 64K x 32-bit Flash Embedded Memory Cell
- Fast Read Access Time
- -
- Random Access Time: 70 ns Worst Case (Process, Voltage, Temperature)
- Page Access Time: 40 ns Worst Case (Process, Voltage, Temperature) Single Supply Voltage: 1.8V ±10% Page Program Operation
- 1024 Pages (64 Words/Page)
- Internal Data Latches For 64 Words
- Read Capability During Data Load Program Cycle Time: 4 ms per Page Including Auto-erase Full Chip Erase Available in 10 ms rdybsyn Signal For End of Program Detection Very Low Power Dissipation
- 8 mA Active Current in Write and Erase
- 4 mA Active Current in Random Read
- 30 µA Stand-by Current High Reliability CMOS Technology
- Typical Endurance: 100K...