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M65608E - 5-Volt Very Low Power CMOS SRAM

General Description

The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.

Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.2 µA) with a fast access time at 30 ns over the full military temperature range.

Key Features

  • Operating Voltage: 5V.
  • Access Time: 30, 45 ns.
  • Very Low Power Consumption.
  • Active: 600 mW (Max).
  • Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32 TTL Compatible Inputs and Outputs Asynchronous No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883.

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Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
M65609E Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

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www.DataSheet4U.com Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW (Max) – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32 TTL Compatible Inputs and Outputs Asynchronous No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019 QML Q and V with SMD 5962-89598 ESCC with Specification 9301/047 Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Utilizing an array of six transistors (6T) memory cells, the M65608E combines an extremely low standby supply current (Typical value = 0.