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M65609E - Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

General Description

The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits.

Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current with a fast access time at 40 ns.

Key Features

  • Operating Voltage: 3.3V.
  • Access Time: 40 ns.
  • Very Low Power Consumption.
  • Active: 160 mW (Max).
  • Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C MFP 32 leads 400 Mils Width Package TTL Compatible Inputs and Outputs Asynchronous Designed on 0.35µm Process No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 200 Krad (Si) a.

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M65608E 5-Volt Very Low Power CMOS SRAM

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www.DataSheet4U.com Features • Operating Voltage: 3.3V • Access Time: 40 ns • Very Low Power Consumption • • • • • • • • – Active: 160 mW (Max) – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C MFP 32 leads 400 Mils Width Package TTL Compatible Inputs and Outputs Asynchronous Designed on 0.35µm Process No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 200 Krad (Si) according to MIL STD 883 Method 1019 Quality grades: QML Q or V with SMD 5962-02501 Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current with a fast access time at 40 ns.