29C256 Datasheet | Atmel

Features - Fast Read Access Time - 70 ns - 5-volt Only Reprogramming - Page Program Operation - - - - - - - - - - Single Cycle Reprogram (Erase and Program) - Internal Address and Data Latches for 64 Bytes Internal Program Control and Timer Hardware and Software Data Protection Fast Program Cycle Times - Page (64 Byte) Program Time - 10 ms - Chip Erase Time - 10 ms DATA Polling for End of Program Detection Low-power Dissipation - 50 m A Active Current - 300 µA CMOS Standby Current Typical Endurance > 10,000 Cycles Single 5V ± 10% Supply CMOS and TTL patible Inputs and Outputs mercial and Industrial Temperature Ranges 256K (32K x 8) 5-volt Only Flash Memory AT29C256 Description The AT29C256 is a five-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 m W. When the device is deselected, the CMOS standby current is less than 300 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. Pin Configurations Pin Name A0 - A14 CE OE WE I/O0 - I/O7 NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs No Connect Don’t Connect OE A11 A9 A8 A13 A14 VCC WE A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 TSOP Top View Type 1 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 PLCC and LCC Top View 4 3 2 1 32 31 30 A7 A12 WE DC VCC A14 A13 Note: PLCC package pins 1 and 17 are DON’T CONNECT. I/O1 I/O2 GND DC I/O3 I/O4 I/O5 14 15 16 17 18 19 20 A6 A5 A4 A3 A2 A1 A0 NC I/O0 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A8 A9 A11 NC OE A10 CE I/O7 I/O6 Rev. 0046P- FLASH-...