29C512 Datasheet | Atmel

Features - Fast Read Access Time - 70 ns - 5-volt Only Reprogramming - Sector Program Operation - Single Cycle Reprogram (Erase and Program) - 512 Sectors (128 Bytes/Sector) - Internal Address and Data Latches for 128 Bytes Internal Program Control and Timer Hardware and Software Data Protection Fast Sector Program Cycle Time - 10 ms DATA Polling for End of Program Detection Low Power Dissipation - 50 m A Active Current - 100 µA CMOS Standby Current Typical Endurance > 10,000 Cycles Single 5V ± 10% Supply CMOS and TTL patible Inputs and Outputs mercial and Industrial Temperature Ranges Green (Pb/Halide-free) Packaging Option - - - - - 512K (64K x 8) 5-volt Only Flash Memory AT29C512 - - - - - 1. Description The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 m W over the mercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. To allow for simple in-system reprogrammability, the AT29C512 does not require high input voltages for programming. Five-volt-only mands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed. During a reprogram cycle, the address locations and 128 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once...