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AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM

This page provides the datasheet information for the AT28C010, a member of the AT28C010-1 1-megabit (128K x 8) Paged Parallel EEPROM family.

Datasheet Summary

Description

The AT28C010 is a high-performance electrically-erasable and programmable readonly memory.

Its 1 megabit of memory is organized as 131,072 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW.

Features

  • Fast Read Access Time.
  • 120 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 128 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Time.
  • Page Write Cycle Time.
  • 10 ms Maximum.
  • 1 to 128-byte Page Write Operation.
  • Low Power Dissipation.
  • 40 mA Active Current.
  • 200 µA CMOS Standby Current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Wri.

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Datasheet preview – AT28C010

Datasheet Details

Part number AT28C010
Manufacturer ATMEL
File Size 375.86 KB
Description 1-megabit (128K x 8) Paged Parallel EEPROM
Datasheet download datasheet AT28C010 Datasheet
Additional preview pages of the AT28C010 datasheet.

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Full PDF Text Transcription

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Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum – 1 to 128-byte Page Write Operation • Low Power Dissipation – 40 mA Active Current – 200 µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only 1-megabit (128K x 8) Paged Parallel EEPROM AT28C010 1.
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