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AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM

Key Features

  • Fast Read Access Time.
  • 120 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 128 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Time.
  • Page Write Cycle Time.
  • 10 ms Maximum.
  • 1 to 128-byte Page Write Operation.
  • Low Power Dissipation.
  • 50 mA Active Current.
  • 10 mA CMOS Standby Current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Writ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum – 1 to 128-byte Page Write Operation • Low Power Dissipation – 50 mA Active Current – 10 mA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 5.104 Read/Modify Write Cycles @ Ground Level – Data Retention: 10 Years • Operating Range: 4.5V to 5.