Datasheet Summary
Features
- Fast Read Access Time
- 120 ns
- Automatic Page Write Operation
- Internal Address and Data Latches for 128 Bytes
- Internal Control Timer
- Fast Write Cycle Time
- Page Write Cycle Time
- 10 ms Maximum
- 1 to 128-byte Page Write Operation
- Low Power Dissipation
- 50 mA Active Current
- 10 mA CMOS Standby Current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology
- Endurance: 5.104 Read/Modify Write Cycles @ Ground Level
- Data Retention: 10 Years
- Operating Range: 4.5V to 5.5V, -55 to +125°C
- CMOS and TTL patible Inputs and Outputs
- No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
- Tested...