AT28C010-12DK
Overview
- Fast Read Access Time - 120 ns
- Automatic Page Write Operation - Internal Address and Data Latches for 128 Bytes - Internal Control Timer
- Fast Write Cycle Time - Page Write Cycle Time - 10 ms Maximum - 1 to 128-byte Page Write Operation
- Low Power Dissipation - 50 mA Active Current - 10 mA CMOS Standby Current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology - Endurance: 5.104 Read/Modify Write Cycles @ Ground Level - Data Retention: 10 Years
- Operating Range: 4.5V to 5.5V, -55 to +125°C
- CMOS and TTL Compatible Inputs and Outputs
- No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
