Datasheet Summary
Features
- Fast Read Access Time
- 120 ns
- Automatic Page Write Operation
- Internal Address and Data Latches for 128-Bytes
- Internal Control Timer
- Fast Write Cycle Time
- Page Write Cycle Time
- 10 ms Maximum
- 1 to 128-Byte Page Write Operation
- Low Power Dissipation
- 80 mA Active Current
- 300µA CMOS Standby Current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology
- Endurance: 104 or 105 Cycles
- Data Retention: 10 Years
- Single 5V 10% Supply
- CMOS and TTL patible Inputs and Outputs
- JEDEC Approved Byte-Wide Pinout
AT28C010 Mil
1-Megabit (128K x 8) Paged Parallel EEPROMs
AT28C010 Military
Pin...
