AT28C010
Overview
- Fast Read Access Time - 120 ns
- Automatic Page Write Operation - Internal Address and Data Latches for 128-Bytes - Internal Control Timer
- Fast Write Cycle Time - Page Write Cycle Time - 10 ms Maximum - 1 to 128-Byte Page Write Operation
- Low Power Dissipation - 80 mA Active Current - 300µA CMOS Standby Current
- Hardware and Software Data Protection
- DATA Polling for End of Write Detection
- High Reliability CMOS Technology - Endurance: 104 or 105 Cycles - Data Retention: 10 Years
- Single 5V 10% Supply
- CMOS and TTL Compatible Inputs and Outputs
- JEDEC Approved Byte-Wide Pinout
