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AT28C010 - 1-Megabit (128K x 8) Paged Parallel Military EEPROM

Datasheet Summary

Features

  • Fast Read Access Time - 120 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 128-Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Time.
  • Page Write Cycle Time - 10 ms Maximum.
  • 1 to 128-Byte Page Write Operation.
  • Low Power Dissipation.
  • 80 mA Active Current.
  • 300µA CMOS Standby Current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write Detection.

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Datasheet preview – AT28C010

Datasheet Details

Part number AT28C010
Manufacturer ATMEL Corporation
File Size 328.99 KB
Description 1-Megabit (128K x 8) Paged Parallel Military EEPROM
Datasheet download datasheet AT28C010 Datasheet
Additional preview pages of the AT28C010 datasheet.

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Full PDF Text Transcription

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Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128-Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation • Low Power Dissipation – 80 mA Active Current – 300µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • Single 5V  10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-Wide Pinout AT28C010 Mil 1-Megabit (128K x 8) Paged Parallel EEPROMs AT28C010 Military Pin Configuration Pin Name Function A0 - A16 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0
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