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Features
• Fast Read Access Time - 120 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation • Low Power Dissipation – 80 mA Active Current – 300µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • Single 5V 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-Wide Pinout
AT28C010 Mil
1-Megabit (128K x 8) Paged Parallel EEPROMs
AT28C010 Military
Pin Configuration
Pin Name
Function
A0 - A16
Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0
AT28C010 Datasheet
