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AT49BV001 - 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

General Description

The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash memory.

Its 1 megabit of memory is organized as 131,072 words by 8 bits.

Key Features

  • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV).
  • Fast Read Access Time.
  • 70 ns.
  • Internal Program Control and Timer.
  • Sector Architecture.
  • One 16-Kbyte Boot Block with Programming Lockout.
  • Two 8-Kbyte Parameter Blocks.
  • Two Main Memory Blocks (32K, 64K Bytes).
  • Fast Erase Cycle Time.
  • 10 Seconds.
  • Byte-by-byte Programming.
  • 30 µs/Byte Typical.
  • Hardware Data Protectio.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16-Kbyte Boot Block with Programming Lockout – Two 8-Kbyte Parameter Blocks – Two Main Memory Blocks (32K, 64K Bytes) • Fast Erase Cycle Time – 10 Seconds • Byte-by-byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.