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AT49LV4096 Datasheet 4-megabit (256k X 16) 3-volt Only CMOS Flash Memory

Manufacturer: Atmel (now Microchip Technology)

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read.

When deselected, the CMOS standby current is less than 50 µA.

Key Features

  • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds.
  • Word-By-Word Programming - 10 µs/Word Hardware Data Protection.
  • DATA Polling For End Of Program Detec.

More Datasheets from Atmel (now Microchip Technology)

Part Number Description
AT49LV001 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV001N 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV001NT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV001T 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV002 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49LV002N 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49LV002NT 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49LV020 2-Megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV040T 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV080 8-Megabit (1M x 8) Single 2.7-volt Battery-Voltage Flash Memory

AT49LV4096 Distributor