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AT49LV4096 - 4-Megabit (256K x 16) 3-volt Only CMOS Flash Memory

Download the AT49LV4096 datasheet PDF. This datasheet also covers the AT49BV4096 variant, as both devices belong to the same 4-megabit (256k x 16) 3-volt only cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read.

Features

  • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds.
  • Word-By-Word Programming - 10 µs/Word Hardware Data Protection.
  • DATA Polling For End Of Program Detec.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT49BV4096-ATMEL.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AT49LV002T 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory ATMEL Corporation
AT49LV008 8-Megabit 1M x 8 3-volt Only Flash Memory ATMEL Corporation
AT49LV010 1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory ATMEL Corporation
AT49LV040 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory ATMEL Corporation
AT49LV1024A (AT49LV1024A / AT49BV1024A) 1-megabit (64K x 16) 3-volt Only Flash Memory ATMEL Corporation

Other Datasheets by Atmel (Microchip)

Part Number Description
AT49LV001 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV001N 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV001NT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV001T 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV002 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds •• Word-By-Word Programming - 10 µs/Word Hardware Data Protection • DATA Polling For End Of Program Detection •• Low Power Dissipation - 25 mA Active Current - 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each.
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