AT49LV4096 Key Features
- Low Voltage Operation
- 2.7V Read
- 5V Program/Erase Fast Read Access Time
- 120 ns
- Internal Erase/Program Control -- Sector Architecture
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time
- 10 seconds
- Word-By-Word Programming